Manufacturer Part Number
CSD19505KCS
Manufacturer
Texas Instruments
Introduction
High-performance, high-power MOSFET transistor designed for demanding power conversion and control applications.
Product Features and Performance
150A continuous drain current at 25°C
80V drain-to-source voltage
8mΩ maximum on-resistance at 100A, 6V gate-to-source voltage
Fast switching with low input capacitance of 7820pF
300W maximum power dissipation
Product Advantages
Efficient power handling with low on-resistance
Robust design for high-current, high-temperature operation
Optimized for high-frequency switching applications
Compact TO-220-3 package for easy mounting
Key Technical Parameters
Operating temperature range: -55°C to 175°C
Gate-to-source voltage (max): ±20V
Threshold voltage (max): 3.2V @ 250A
Drive voltage (max on-resistance, min on-resistance): 6V, 10V
Gate charge (max): 76nC @ 10V
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Direct replacement for existing TO-220-3 MOSFET packages
Application Areas
Power conversion and control in industrial, automotive, and consumer electronics
Motor drives, switch-mode power supplies, and other high-power applications
Product Lifecycle
Currently in active production
Replacement parts and upgrades available
Key Reasons to Choose
High current and power handling capability
Excellent efficiency with low on-resistance
Wide temperature range and robust design
Optimized for high-frequency switching
Compact and easy to integrate
