Manufacturer Part Number
CSD19532Q5BT
Manufacturer
Texas Instruments
Introduction
High-performance N-channel power MOSFET transistor designed for high-frequency, high-power switching applications.
Product Features and Performance
100V drain-to-source voltage
9mΩ maximum on-resistance
100A continuous drain current
Ultra-low gate charge for high-frequency operation
Very low input capacitance for high-efficiency switching
Wide temperature range of -55°C to 150°C
Product Advantages
Excellent switching performance for high-frequency applications
High power density and efficiency
Robust design for reliable operation
Compact 8-VSON-CLIP package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4.9mΩ
Drain Current (Id): 100A
Input Capacitance (Ciss): 4810pF
Power Dissipation: 3.1W (Ta), 195W (Tc)
Quality and Safety Features
ROHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Suitable for a wide range of high-frequency, high-power switching applications, including DC-DC converters, motor drives, and power inverters.
Application Areas
High-frequency, high-power switching applications
DC-DC converters
Motor drives
Power inverters
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Replacement or upgrade options may be available from Texas Instruments.
Key Reasons to Choose This Product
Excellent switching performance for high-frequency operation
High power density and efficiency
Robust design for reliable operation
Compact 8-VSON-CLIP package
Wide temperature range for demanding applications
AEC-Q101 qualified for automotive use
