Manufacturer Part Number
CSD19535KCS
Manufacturer
Texas Instruments
Introduction
This product is a high-performance, single N-channel MOSFET transistor from the NexFET series.
Product Features and Performance
Operates over a wide temperature range of -55°C to 175°C
Capable of handling continuous drain current of up to 150A at 25°C
Low on-resistance of 3.6mΩ @ 100A, 10V
High input capacitance of 7930pF @ 50V
Maximum power dissipation of 300W
Product Advantages
Excellent thermal management due to low on-resistance
High current handling capability
Wide operating temperature range
Suitable for high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs, Max): ±20V
Threshold Voltage (Vgs(th)): 3.4V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Gate Charge (Qg, Max): 101nC @ 10V
Quality and Safety Features
RoHS3 compliant
TO-220-3 package for reliable through-hole mounting
Compatibility
Suitable for a wide range of high-power, high-efficiency applications such as motor drives, power supplies, and industrial controls.
Application Areas
Power conversion and control
Motor drives
Industrial automation
Renewable energy systems
Product Lifecycle
This product is an active and widely used part in the Texas Instruments NexFET series. Replacement or upgraded models may become available in the future as technology advances.
Key Reasons to Choose This Product
Exceptional performance and efficiency due to low on-resistance
High current handling capability for demanding applications
Reliable and thermally efficient operation over a wide temperature range
RoHS3 compliance for environmentally-friendly use
Compatibility with a broad range of high-power applications
