Manufacturer Part Number
CSD19536KCS
Manufacturer
Texas Instruments
Introduction
The CSD19536KCS is a high-performance N-channel MOSFET transistor from Texas Instruments, designed for a wide range of power electronics applications.
Product Features and Performance
100V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
7mOhm Maximum On-State Resistance (Rds(on)) at 100A, 10V
150A Continuous Drain Current (Id) at 25°C
12000pF Maximum Input Capacitance (Ciss) at 50V
375W Maximum Power Dissipation at 25°C
Product Advantages
Efficient power handling with low on-state resistance
High current capability
Suitable for a wide range of power electronics applications
Key Technical Parameters
N-Channel MOSFET Technology
TO-220-3 Package
-55°C to 175°C Operating Temperature Range
Quality and Safety Features
RoHS3 Compliant
Reliable and robust design
Compatibility
Suitable for a wide range of power electronics applications, such as motor drives, power supplies, and power conversion circuits.
Application Areas
Power electronics
Motor drives
Power conversion circuits
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades available from Texas Instruments
Key Reasons to Choose This Product
High performance and efficiency
Robust and reliable design
Wide operating temperature range
Suitable for a variety of power electronics applications
Readily available and supported by Texas Instruments
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