Manufacturer Part Number
CSD19534Q5AT
Manufacturer
Texas Instruments
Introduction
The CSD19534Q5AT is a high-performance N-Channel MOSFET transistor from Texas Instruments.
Product Features and Performance
100V Drain-to-Source Voltage
44A Continuous Drain Current at 25°C
1mΩ Maximum On-Resistance at 10A, 10V
1680pF Maximum Input Capacitance at 50V
-55°C to 150°C Operating Temperature Range
2W Maximum Power Dissipation at 25°C
63W Maximum Power Dissipation at 100°C
Product Advantages
Excellent power handling and efficiency
Low on-resistance for minimal power losses
Wide temperature range for versatile applications
Compact 8-VSONP (5x6) package
Key Technical Parameters
N-Channel MOSFET
100V Drain-to-Source Voltage
20V Maximum Gate-to-Source Voltage
1mΩ Maximum On-Resistance
44A Continuous Drain Current
1680pF Maximum Input Capacitance
22nC Maximum Gate Charge at 10V
Quality and Safety Features
RoHS3 Compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Power supplies
Motor drives
Inverters
Switch-mode power supplies
Industrial and consumer electronics
Product Lifecycle
Currently in active production
No plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
Excellent power handling and efficiency
Low on-resistance for minimal power losses
Wide temperature range for versatile applications
Compact and space-saving package
Proven reliability and quality
CSD19536KCSTexas InstrumentsMOSFET N-CH 100V 150A TO220-3