CSD19537Q3 - Texas Instruments

Manufacturer Part Number

CSD19537Q3

Manufacturer

Texas Instruments

Introduction

The CSD19537Q3 is a high-performance N-channel MOSFET transistor from Texas Instruments, part of the NexFET series.

Product Features and Performance

Low on-resistance of 14.5 mΩ at 10 A and 10 V

High current rating of 50 A continuous at 25°C

Wide operating temperature range of -55°C to 150°C

Fast switching capability with low gate charge of 21 nC at 10 V

Low input capacitance of 1680 pF at 50 V

Product Advantages

Excellent power efficiency due to low on-resistance

Compact 8-VSON (3.3x3.3) package for space-constrained applications

High reliability and stability across wide temperature range

Suitable for high-current, high-voltage switching applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 100 V

Gate-Source Voltage (Vgs Max): ±20 V

Threshold Voltage (Vgs(th) Max): 3.6 V at 250 A

Drive Voltage (Max Rds On, Min Rds On): 6 V, 10 V

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of high-power, high-voltage switching applications

Application Areas

Industrial power supplies, motor drives, power conversion, and other high-power electronics

Product Lifecycle

Currently in active production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent power efficiency and high current capability

Compact package and wide operating temperature range

Reliable and stable performance across various applications

Suitable for high-power, high-voltage switching requirements