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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleCSD19535KTTT
Texas Instruments
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CSD19535KTTT - Texas Instruments

Manufacturer Part Number
CSD19535KTTT
Manufacturer
Texas Instruments
Allelco Part Number
32D-CSD19535KTTT
ECAD Model
Parts Description
MOSFET N-CH 100V 200A DDPAK
Detailed Description
Package
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Data sheet
CSD19535KTTT.pdf
RoHs Status
ROHS3 Compliant
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Specifications

CSD19535KTTT Tech Specifications
Texas Instruments - CSD19535KTTT technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments - CSD19535KTTT

Product Attribute Attribute Value  
Manufacturer Texas Instruments  
Vgs(th) (Max) @ Id 3.4V @ 250µA  
Vgs (Max) ±20V  
Technology MOSFET (Metal Oxide)  
Supplier Device Package DDPAK/TO-263-3  
Series NexFET™  
Rds On (Max) @ Id, Vgs 3.4mOhm @ 100A, 10V  
Power Dissipation (Max) 300W (Tc)  
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA  
Package Tape & Reel (TR)  
Product Attribute Attribute Value  
Operating Temperature -55°C ~ 175°C (TJ)  
Mounting Type Surface Mount  
Input Capacitance (Ciss) (Max) @ Vds 7930 pF @ 50 V  
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V  
FET Type N-Channel  
FET Feature -  
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V  
Drain to Source Voltage (Vdss) 100 V  
Current - Continuous Drain (Id) @ 25°C 200A (Ta)  
Base Product Number CSD19535  

Parts Introduction

Manufacturer Part Number

CSD19535KTTT

Manufacturer

Texas Instruments

Introduction

High-performance N-channel MOSFET transistor

Product Features and Performance

100V drain-source voltage

4mΩ maximum on-resistance at 100A, 10V gate voltage

200A continuous drain current at 25°C

300W maximum power dissipation

Wide operating temperature range of -55°C to 175°C

Product Advantages

Excellent thermal and electrical performance

High power density

Wide operating temperature range

Suitable for high-current, high-power applications

Key Technical Parameters

Drain-source voltage: 100V

Gate-source voltage: ±20V

On-resistance: 3.4mΩ

Continuous drain current: 200A

Input capacitance: 7930pF

Power dissipation: 300W

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for surface mount applications

Application Areas

High-power switching

Motor drives

Power supplies

Industrial and automotive electronics

Product Lifecycle

Current product, no known discontinuation plans

Replacement or upgrade options available from Texas Instruments

Key Reasons to Choose This Product

Excellent thermal and electrical performance for high-power, high-current applications

Wide operating temperature range

High power density

Reliable and durable design

Compatibility with surface mount technology

Parts with Similar Specifications

The three parts on the right have similar specifications to Texas Instruments CSD19535KTTT

Product Attribute CSD19535KTTT CSD19538Q2T CSD19534Q5AT CSD19536KTT
Part Number CSD19535KTTT CSD19538Q2T CSD19534Q5AT CSD19536KTT
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Series NexFET™ NexFET™ NexFET™ NexFET™
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V 5.6 nC @ 10 V 22 nC @ 10 V 153 nC @ 10 V
FET Type N-Channel N-Channel N-Channel N-Channel
Power Dissipation (Max) 300W (Tc) 2.5W (Ta), 20.2W (Tc) 3.2W (Ta), 63W (Tc) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Supplier Device Package DDPAK/TO-263-3 6-WSON (2x2) 8-VSONP (5x6) DDPAK/TO-263-3
Rds On (Max) @ Id, Vgs 3.4mOhm @ 100A, 10V 59mOhm @ 5A, 10V 15.1mOhm @ 10A, 10V 2.4mOhm @ 100A, 10V
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA 6-WDFN Exposed Pad 8-PowerTDFN TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Package Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
FET Feature - - - -
Vgs(th) (Max) @ Id 3.4V @ 250µA 3.8V @ 250µA 3.4V @ 250µA 3.2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 7930 pF @ 50 V 454 pF @ 50 V 1680 pF @ 50 V 12000 pF @ 50 V
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Ta) 13.1A (Tc) 44A (Tc) 200A (Ta)
Base Product Number CSD19535 CSD19538 CSD19534 CSD19536
Vgs (Max) ±20V ±20V ±20V ±20V

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Delivery Time

In-stock items can be shipped within 24 hours. Some parts will be arranged for delivery within 1-2 days from the date all items arrive at our warehouse. And Allelco ships order once a day at about 17:00, except Sunday. Once the goods are shipped, the estimated delivery time depends on the shipping methods and Delivery destination. The table below shows are the logistic time for some common countries.

Delivery Cost

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  2. Use our account for the shipment. Refer to the table below for the approximate charges.
(Different time frame / countries / package size has different price.)

Delivery Method

  1. Global Common Shipment by DHL / UPS / FedEx / TNT / EMS / SF we support.
  2. Others more shipping ways, please get in touch with your customer manager.

Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.

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Certifications & Memberships

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Texas Instruments

CSD19535KTTT

Texas Instruments
32D-CSD19535KTTT

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