Manufacturer Part Number
CSD19538Q2T
Manufacturer
Texas Instruments
Introduction
High-performance N-channel NexFET power MOSFET for power management applications
Product Features and Performance
Optimized for high-efficiency power conversion
Low on-resistance (59 mOhm max @ 5 A, 10 V)
High current capability (13.1 A continuous drain current)
Wide operating temperature range (-55°C to 150°C)
Low input capacitance (454 pF max @ 50 V)
Fast switching speed and low gate charge (5.6 nC max @ 10 V)
Product Advantages
Excellent power efficiency
High power density
Reliable operation in harsh environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100 V
Gate-to-Source Voltage (Vgs): ±20 V
Continuous Drain Current (Id): 13.1 A
On-Resistance (Rds(on)): 59 mOhm max
Threshold Voltage (Vgs(th)): 3.8 V max
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Surface mount package (6-WSON 2x2)
Compatible with standard SMT assembly processes
Application Areas
Power management in consumer electronics, industrial, and automotive applications
High-efficiency DC-DC converters, motor drives, and other power conversion systems
Product Lifecycle
Active and widely available
Replacement and upgrade options may be available
Key Reasons to Choose This Product
Excellent power efficiency and high power density
Wide operating temperature range and reliable operation
Easy integration and compatibility with standard SMT assembly
High current capability and low on-resistance for efficient power conversion
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