CSD19538Q3AT - Texas Instruments

Manufacturer Part Number

CSD19538Q3AT

Manufacturer

Texas Instruments

Introduction

High-performance N-channel MOSFET transistor for power management and amplification applications.

Product Features and Performance

100V drain-source voltage

59mΩ maximum on-resistance at 5A, 10V

15A continuous drain current at 25°C

454pF maximum input capacitance at 50V

8W maximum power dissipation at ambient temperature, 23W at case temperature

Product Advantages

Efficient power management with low on-resistance

High voltage capability

Compact PowerVDFN package

Key Technical Parameters

Vdss: 100V

Vgs (Max): ±20V

Rds On (Max) @ 5A, 10V: 59mΩ

Id (Continuous) @ 25°C: 15A

Ciss (Max) @ 50V: 454pF

Power Dissipation (Max) @ Ambient: 2.8W, @ Case: 23W

Quality and Safety Features

RoHS3 compliant

Operating temperature range: -55°C to 150°C

Compatibility

Compatible with various power management and amplification circuits.

Application Areas

Power management

Power amplification

Motor drivers

Switch-mode power supplies

Product Lifecycle

Currently available, no discontinuation or replacement plans known.

Key Reasons to Choose

Excellent power efficiency with low on-resistance

High voltage and current handling capability

Compact PowerVDFN package for space-constrained designs

Wide operating temperature range