CSD23201W10 - Texas Instruments

Manufacturer Part Number

CSD23201W10

Manufacturer

Texas Instruments

Introduction

High-performance, low on-resistance P-channel MOSFET in a compact 4-DSBGA package

Product Features and Performance

Very low on-resistance of 82 mΩ at 500 mA, 4.5 V

Compact 4-DSBGA (1x1) package

Supports up to 2.2 A continuous drain current at 25°C

Wide operating temperature range of -55°C to 150°C

Low gate charge of 2.4 nC at 4.5 V

Low input capacitance of 325 pF at 6 V

Product Advantages

Excellent power efficiency due to low on-resistance

Small and space-saving package

Wide temperature range for use in diverse applications

Fast switching performance with low gate charge

Key Technical Parameters

Drain to Source Voltage (Vdss): 12 V

Gate to Source Voltage (Vgs Max): -6 V

On-Resistance (Rds On Max): 82 mΩ at 500 mA, 4.5 V

Continuous Drain Current (Id): 2.2 A at 25°C

Input Capacitance (Ciss Max): 325 pF at 6 V

Power Dissipation (Max): 1 W at 25°C

Quality and Safety Features

RoHS3 compliant

Meets high-reliability industrial and automotive standards

Compatibility

Surface mount technology (SMT) compatible

Tape and reel packaging for automated assembly

Application Areas

Ideal for power management and control circuits in a wide range of consumer, industrial, and automotive applications

Suitable for use in DC/DC converters, motor drivers, load switches, and other power management applications

Product Lifecycle

Current product, not nearing discontinuation

Replacements and upgrades available from Texas Instruments' extensive portfolio of NexFET MOSFETs

Key Reasons to Choose This Product

Excellent power efficiency and performance due to ultra-low on-resistance

Compact and space-saving 4-DSBGA package

Wide operating temperature range for use in diverse environments

Fast switching performance with low gate charge for improved system efficiency

RoHS3 compliance and industrial/automotive-grade quality and reliability

Compatibility with surface mount assembly processes