Manufacturer Part Number
CSD23285F5T
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
ROHS3 Compliant
Surface Mount Mounting Type
FemtoFET Series
P-Channel MOSFET
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -6V
Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V
Current Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 6 V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250A
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Product Advantages
ROHS3 Compliant
Surface Mount Mounting
Wide Operating Temperature Range
Low Rds On Resistance
High Current Capability
Low Input Capacitance
Key Technical Parameters
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): -6V
Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V
Current Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 6 V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250A
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount Mounting
Application Areas
Discrete Semiconductor Applications
Product Lifecycle
Not Discontinued
Replacement/Upgrade Options Available
Key Reasons to Choose This Product
ROHS3 Compliant
Surface Mount Mounting
Wide Operating Temperature Range
Low Rds On Resistance
High Current Capability
Low Input Capacitance