Manufacturer Part Number
CSD23202W10
Manufacturer
Texas Instruments
Introduction
High-performance P-channel NexFET MOSFET
Product Features and Performance
Extremely low on-resistance (RDS(on))
High current handling capability
Fast switching speed
Low gate charge
Compact 4-DSBGA (1x1) package
Product Advantages
Optimized for high-efficiency power conversion applications
Excellent thermal performance
Robust and reliable
Key Technical Parameters
Drain to Source Voltage (Vdss): 12V
Vgs (Max): -6V
Rds On (Max) @ Id, Vgs: 53mOhm @ 500mA, 4.5V
Continuous Drain Current (Id) @ 25°C: 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 512pF @ 6V
Power Dissipation (Max): 1W
Quality and Safety Features
RoHS3 compliant
Suitable for automotive and industrial applications
Compatibility
Surface mount package
Tape and reel packaging
Application Areas
Switched-mode power supplies
Motor drivers
Battery charging circuits
DC-DC converters
Product Lifecycle
Active product, no discontinuation planned
Suitable replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Compact packaging for space-constrained designs
Robust and reliable operation
Optimized for high-performance power conversion applications
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