Manufacturer Part Number
CSD23202W10T
Manufacturer
Texas Instruments
Introduction
The CSD23202W10T is a P-Channel MOSFET transistor from Texas Instruments' NexFET series.
Product Features and Performance
P-Channel MOSFET transistor
12V drain to source voltage (Vdss)
53mOhm maximum on-resistance (Rds(on)) at 500mA, 4.5V
2A continuous drain current (Id) at 25°C
512pF maximum input capacitance (Ciss) at 6V
1W maximum power dissipation
Product Advantages
Efficient power management
Low on-resistance for low power loss
Compact 4-DSBGA (1x1) package
Key Technical Parameters
Voltage: 12V Vdss, -6V Vgs(max)
Current: 2.2A continuous drain current
Resistance: 53mOhm Rds(on) max
Capacitance: 512pF Ciss max
Power: 1W maximum power dissipation
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Surface mount, tape and reel packaging
Application Areas
Power management
Battery-powered devices
Mobile electronics
Product Lifecycle
Currently in production, no indication of discontinuation.
Key Reasons to Choose
Efficient power handling with low on-resistance
Compact 4-DSBGA (1x1) package
Wide operating temperature range
RoHS3 compliance for environmental safety