CSD22206W - Texas Instruments

Manufacturer Part Number

CSD22206W

Manufacturer

Texas Instruments

Introduction

High-performance P-channel MOSFET with low on-resistance and high current capability.

Product Features and Performance

Low on-resistance of 5.7 mΩ at 2A, 4.5V

Capable of 5A continuous drain current at 25°C

Input capacitance of 2275 pF at 4V

Maximum power dissipation of 1.7W

Product Advantages

Excellent thermal performance

High current handling capability

Very low on-resistance

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 8V

Maximum Gate-to-Source Voltage (Vgs): -6V

Threshold Voltage (Vgs(th)): 1.05V at 250μA

Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V

Gate Charge (Qg): 14.6 nC at 4.5V

Quality and Safety Features

RoHS3 compliant

Operating temperature range of -55°C to 150°C

Compatibility

Surface mount package (9-DSBGA)

Tape and reel packaging

Application Areas

Power management

Motor control

Switching applications

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent thermal performance and high current handling

Very low on-resistance for efficient power delivery

Compact surface mount package for space-constrained designs

Wide operating temperature range for versatile applications