CSD23280F3 - Texas Instruments

Manufacturer Part Number

CSD23280F3

Manufacturer

Texas Instruments

Introduction

Discrete Semiconductor Product

Single Transistor FET, MOSFET

Product Features and Performance

P-Channel MOSFET

Operating Temperature Range: -55°C to 150°C

Drain to Source Voltage (Vdss): 12V

Maximum Gate-Source Voltage (Vgs(max)): -6V

On-Resistance (Rds(on)): 116mΩ @ 400mA, 4.5V

Continuous Drain Current (Id): 1.8A @ 25°C

Input Capacitance (Ciss): 234pF @ 6V

Power Dissipation (Pd): 500mW

Product Advantages

Low on-resistance

Small package size (3-PICOSTAR)

Tape and reel packaging for automated assembly

Key Technical Parameters

Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)

FET Type: P-Channel

Threshold Voltage (Vgs(th)): 950mV @ 250μA

Drive Voltage Range: 1.5V to 4.5V

Gate Charge (Qg): 1.23nC @ 4.5V

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface mount package (3-XFDFN)

Application Areas

Suitable for use in a variety of power management and switching applications

Product Lifecycle

This product is currently available and is not nearing discontinuation.

Replacements and upgrades may be available from Texas Instruments.

Key Reasons to Choose This Product

Low on-resistance for efficient power delivery

Small package size for space-constrained designs

Tape and reel packaging for automated assembly

RoHS compliance for environmental responsibility

Broad operating temperature range for versatile applications