Manufacturer Part Number
CSD23381F4
Manufacturer
Texas Instruments
Introduction
Low on-resistance MOSFET transistor
Part of the NexFET series
Product Features and Performance
Voltage rating up to 12V
Maximum drain current of 2.3A at 25°C
Very low on-resistance of 175mΩ at 500mA, 4.5V
High input capacitance of 236pF at 6V
Power dissipation up to 500mW
Product Advantages
Excellent power efficiency due to low on-resistance
Compact 3-PICOSTAR package for space-constrained designs
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
P-channel MOSFET transistor
Gate-source voltage up to -8V
Gate threshold voltage of 1.2V at 250μA
Gate charge of 1.14nC at 4.5V
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering in tape and reel packaging
Compatibility
Can be used as a replacement or upgrade for similar P-channel MOSFET transistors
Application Areas
Suitable for power management, switching, and control applications in electronic devices
Product Lifecycle
Currently in active production
No plans for discontinuation or replacement at this time
Key Reasons to Choose
High efficiency and power density due to low on-resistance
Compact package and wide temperature range for versatile applications
Proven reliability and quality from a trusted manufacturer, Texas Instruments