Manufacturer Part Number
CSD23382F4
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
P-Channel MOSFET
12V Drain to Source Voltage
±8V Gate to Source Voltage
76mΩ Drain-Source On-Resistance
5A Continuous Drain Current
235pF Input Capacitance
500mW Power Dissipation
-55°C to 150°C Operating Temperature
Product Advantages
High efficiency
Small form factor
Wide temperature range
Key Technical Parameters
Vdss: 12V
Vgs(Max): ±8V
Rds(on): 76mΩ @ 500mA, 4.5V
Id: 3.5A @ 25°C
Ciss: 235pF @ 6V
Pd: 500mW
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Package
Tape and Reel Packaging
Application Areas
Power management
Amplifier circuits
Switching circuits
Product Lifecycle
Current product
No information on discontinuation or upgrades
Key Reasons to Choose This Product
High efficiency due to low on-resistance
Small form factor for compact designs
Wide temperature range for diverse applications
RoHS compliance for environmental consideration