CSD23203W - Texas Instruments

Manufacturer Part Number

CSD23203W

Manufacturer

Texas Instruments

Introduction

Discrete Semiconductor Product

P-Channel MOSFET Transistor

Product Features and Performance

8V Drain to Source Voltage (Vdss)

4mOhm Max On-Resistance (Rds(on)) at 1.5A, 4.5V

3A Continuous Drain Current (Id) at 25°C

914pF Max Input Capacitance (Ciss) at 4V

750mW Max Power Dissipation at 25°C

-55°C to 150°C Operating Temperature Range

Product Advantages

High efficiency and low power loss

Small footprint DSBGA package

Suitable for high-density power conversion applications

Key Technical Parameters

Vgs(Max): -6V

Vgs(th) (Max) @ 250μA: 1.1V

Drive Voltage (Max Rds(on), Min Rds(on)): 1.8V, 4.5V

Gate Charge (Qg) (Max) @ 4.5V: 6.3nC

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount Mounting Type

Application Areas

Power Management

DC-DC Conversion

Battery Charging

Motor Control

Product Lifecycle

Currently available

No known discontinuation plans

Key Reasons to Choose

Excellent power efficiency and low on-resistance

Compact DSBGA package for high-density designs

Broad operating temperature range

Suitable for a wide range of power conversion applications