Manufacturer Part Number
CSD19535KTT
Manufacturer
Texas Instruments
Introduction
High-performance N-channel MOSFET transistor
Designed for switching and power conversion applications
Product Features and Performance
Operates at high voltages up to 100V
Extremely low on-resistance (RDS(on)) of 3.4mΩ
Supports high continuous drain current of 200A
Fast switching speed and low gate charge
Product Advantages
Excellent power efficiency due to low conduction losses
Compact DDPAK/TO-263-3 package for high power density
Wide operating temperature range of -55°C to 175°C
Suitable for high-power, high-frequency applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 100V
Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 3.4mΩ @ 100A, 10V
Input Capacitance (Ciss): 7930pF @ 50V
Power Dissipation (Pd): 300W
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
Compatible with a wide range of power electronics circuits and systems
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and automotive power electronics
Product Lifecycle
Currently in active production
No plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose
Excellent power efficiency and performance
Compact and thermally efficient packaging
Wide operating temperature range
Suitable for high-power, high-frequency applications
