Manufacturer Part Number
CSD19533Q5A
Manufacturer
Texas Instruments
Introduction
The CSD19533Q5A is a high-performance N-channel MOSFET transistor from Texas Instruments' NexFET series, designed for a variety of power conversion and control applications.
Product Features and Performance
100V Drain-to-Source Voltage (Vdss)
Low On-Resistance (Rds(on)) of 9.4mΩ @ 13A, 10V
High Continuous Drain Current (Id) of 100A at 25°C
Wide Operating Temperature Range of -55°C to 150°C
Fast Switching Characteristics
Low Gate Charge (Qg) of 35nC @ 10V
Product Advantages
Excellent power efficiency due to low on-resistance
High current handling capability
Robust temperature performance
Compact 8-VSONP (5x6) package
Key Technical Parameters
Vdss: 100V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 9.4mΩ @ 13A, 10V
Id (Continuous) @ 25°C: 100A
Ciss (Max) @ Vds: 2670pF @ 50V
Power Dissipation (Max): 3.2W (Ta), 96W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with wide temperature range
Compatibility
Compatible with a variety of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Power amplifiers
Class-D audio amplifiers
Industrial and automotive electronics
Product Lifecycle
This product is an active and widely used component in Texas Instruments' NexFET portfolio.
Replacement or upgrade options are available as the technology continues to evolve.
Key Reasons to Choose This Product
Excellent power efficiency and high current handling capability
Robust temperature performance for harsh environments
Compact and space-saving package
Proven reliability and performance in a wide range of applications
Availability of replacement and upgrade options as technology advances
