Manufacturer Part Number
CSD19506KTT
Manufacturer
Texas Instruments
Introduction
High-performance N-channel MOSFET transistor for power management applications
Product Features and Performance
80V Drain-Source Voltage (Vdss)
±20V Gate-Source Voltage (Vgs)
3mΩ Drain-Source On-Resistance (Rds(on)) at 100A, 10V
200A Continuous Drain Current (Id) at 25°C
12200pF Input Capacitance (Ciss) at 40V
375W Power Dissipation (Tc)
Wide Operating Temperature Range: -55°C to 175°C
Product Advantages
High efficiency and low power loss
Compact and space-saving DDPAK/TO-263-3 package
Suitable for high-current, high-power applications
Key Technical Parameters
MOSFET Technology: N-Channel
Vgs(th) (Max): 3.2V @ 250A
Gate Drive Voltage: 6V (Max Rds(on)), 10V (Min Rds(on))
Gate Charge (Qg): 156nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Suitable for Surface Mount applications
Compatibility
Compatible with a wide range of power management and high-current circuit designs
Application Areas
Power supplies
Motor drives
Inverters
DC-DC converters
Industrial and consumer electronics
Product Lifecycle
Currently in production. No plans for discontinuation. Replacement or upgrade options available.
Key Reasons to Choose
High efficiency and low power loss for improved system performance
Compact and space-saving package for design flexibility
Suitable for high-current, high-power applications
Wide operating temperature range for diverse environmental conditions
Robust quality and safety features for reliable operation
