Manufacturer Part Number
CSD19502Q5B
Manufacturer
Texas Instruments
Introduction
High-performance N-channel NexFET power MOSFET
Product Features and Performance
Very low on-resistance for high efficiency
High power density with excellent thermal management
Fast switching speed for high-frequency applications
Robust and reliable design for demanding applications
Product Advantages
Industry-leading low on-resistance for superior efficiency
Compact package for high power density
Excellent thermal performance for reliable operation
High-frequency switching capability
Key Technical Parameters
Drain to Source Voltage (Vdss): 80V
On-Resistance (Rds(on)): 4.1mΩ
Continuous Drain Current (Id): 100A
Input Capacitance (Ciss): 4870pF
Power Dissipation (Max): 3.1W (Ta), 195W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability and safety-critical applications
Compatibility
Suitable for a wide range of power electronics and motor control applications
Application Areas
Inverters, converters, and motor drives
Power supplies and battery chargers
Industrial and automotive electronics
Product Lifecycle
This product is currently in active production
Replacement or upgraded products may be available in the future
Key Reasons to Choose This Product
Industry-leading low on-resistance for maximum efficiency
High power density and excellent thermal performance for reliable operation
Fast switching speed for high-frequency applications
Robust and reliable design for demanding applications
RoHS3 compliance for use in safety-critical systems
CSD19506KCSTexas InstrumentsMOSFET N-CH 80V 100A TO220-3