Manufacturer Part Number
CSD18543Q3A
Manufacturer
Texas Instruments
Introduction
High-performance N-channel MOSFET transistor
Part of the NexFET series
Product Features and Performance
Operates at temperatures from -55°C to 150°C
Drain-to-source voltage up to 60V
Gate-to-source voltage up to ±20V
Very low on-resistance of 9.9mΩ @ 12A, 10V
High continuous drain current of 60A at 25°C
Input capacitance of 1150pF @ 30V
Gate charge of 14.5nC @ 10V
Product Advantages
Excellent thermal performance
Extremely low on-resistance for high efficiency
High current capability
Suitable for high-frequency switching applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 60V
Maximum gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 9.9mΩ @ 12A, 10V
Continuous drain current (Id): 60A @ 25°C
Input capacitance (Ciss): 1150pF @ 30V
Gate charge (Qg): 14.5nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Can be used in a wide range of power electronics and power conversion applications
Application Areas
Power supplies
Motor drives
Inverters
Battery management systems
Industrial and consumer electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent thermal performance and efficiency due to extremely low on-resistance
High current capability for demanding applications
Reliable operation at high temperatures
Compact package size and surface mount design for easy integration
Proven performance and quality from a reputable manufacturer, Texas Instruments
