CSD18543Q3A - Texas Instruments

Manufacturer Part Number

CSD18543Q3A

Manufacturer

Texas Instruments

Introduction

High-performance N-channel MOSFET transistor

Part of the NexFET series

Product Features and Performance

Operates at temperatures from -55°C to 150°C

Drain-to-source voltage up to 60V

Gate-to-source voltage up to ±20V

Very low on-resistance of 9.9mΩ @ 12A, 10V

High continuous drain current of 60A at 25°C

Input capacitance of 1150pF @ 30V

Gate charge of 14.5nC @ 10V

Product Advantages

Excellent thermal performance

Extremely low on-resistance for high efficiency

High current capability

Suitable for high-frequency switching applications

Key Technical Parameters

Drain-to-source voltage (Vdss): 60V

Maximum gate-to-source voltage (Vgs): ±20V

On-resistance (Rds(on)): 9.9mΩ @ 12A, 10V

Continuous drain current (Id): 60A @ 25°C

Input capacitance (Ciss): 1150pF @ 30V

Gate charge (Qg): 14.5nC @ 10V

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Can be used in a wide range of power electronics and power conversion applications

Application Areas

Power supplies

Motor drives

Inverters

Battery management systems

Industrial and consumer electronics

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

Excellent thermal performance and efficiency due to extremely low on-resistance

High current capability for demanding applications

Reliable operation at high temperatures

Compact package size and surface mount design for easy integration

Proven performance and quality from a reputable manufacturer, Texas Instruments