Manufacturer Part Number
CSD18541F5
Manufacturer
Texas Instruments
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
Low on-resistance (65mΩ max at 1A, 10V)
High drain current capability (2.2A at 25°C)
Wide operating voltage range (up to 60V)
Wide operating temperature range (-55°C to 150°C)
Low input capacitance (777pF max at 30V)
Low gate charge (14nC max at 10V)
Product Advantages
Excellent power efficiency
High reliability
Compact 3-PICOSTAR package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 2.2A at 25°C
On-Resistance (Rds(on)): 65mΩ max at 1A, 10V
Input Capacitance (Ciss): 777pF max at 30V
Gate Charge (Qg): 14nC max at 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Suitable for a wide range of electronic applications
Application Areas
Power management circuits
Battery charging circuits
Motor control circuits
Industrial and automotive electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgraded options may become available in the future.
Key Reasons to Choose This Product
Excellent power efficiency and high reliability
Wide operating voltage and temperature ranges
Compact 3-PICOSTAR package
Suitable for a variety of power management and control applications