Manufacturer Part Number
CSD18541F5T
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
MOSFET (Metal Oxide) Technology
N-Channel FET Type
Drain to Source Voltage (Vdss) of 60V
Gate Voltage (Vgs) Range of ±20V
On-Resistance (Rds On) of 65mOhm @ 1A, 10V
Continuous Drain Current (Id) of 2.2A @ 25°C
Input Capacitance (Ciss) of 777pF @ 30V
Power Dissipation of 500mW @ Ta
Gate Charge (Qg) of 14nC @ 10V
Product Advantages
Compact 3-PICOSTAR Surface Mount Package
Wide Operating Temperature Range of -55°C to 150°C
RoHS3 Compliant
Key Technical Parameters
Vdss: 60V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 10V
Id (Continuous) @ 25°C: 2.2A
Ciss (Max) @ Vds: 777pF @ 30V
Power Dissipation (Max): 500mW @ Ta
Vgs(th) (Max) @ Id: 2.2V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Qg (Max) @ Vgs: 14nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount 3-PICOSTAR Package
Application Areas
Suitable for a wide range of power management and control applications
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available
Key Reasons to Choose
Compact surface mount package
Wide operating temperature range
Low on-resistance for efficient power delivery
High current handling capability
RoHS3 compliance for environmental responsibility