Manufacturer Part Number
CSD19501KCS
Manufacturer
Texas Instruments
Introduction
High-performance N-channel NexFET MOSFET with industry-leading figure of merit (FOM) for high-efficiency power conversion applications.
Product Features and Performance
80V drain-to-source voltage
6mΩ on-resistance at 60A and 10V gate drive
100A continuous drain current at 25°C
3980pF input capacitance
217W maximum power dissipation
Wide operating temperature range of -55°C to 175°C
Product Advantages
Extremely low on-resistance for high efficiency
High current capability for demanding applications
Excellent high-frequency switching performance
Reliable and rugged design for industrial use
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 80V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 6.6mΩ @ 60A, 10V
Drain Current (Id): 100A @ 25°C
Input Capacitance (Ciss): 3980pF @ 40V
Power Dissipation (Pd): 217W @ Tc
Quality and Safety Features
RoHS3 compliant
Reliable TO-220-3 package
Wide operating temperature range
Robust and durable design for industrial applications
Compatibility
Compatible with a wide range of power conversion circuits and systems
Application Areas
High-efficiency power supplies
Inverters and motor drives
Battery chargers
Industrial automation and control systems
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Industry-leading low on-resistance for high efficiency
High current capability for demanding applications
Excellent high-frequency switching performance
Reliable and rugged design for industrial use
Wide operating temperature range for versatile applications
