Manufacturer Part Number
CSD18543Q3AT
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
60V Drain-Source Voltage
±20V Gate-Source Voltage
6mΩ On-Resistance @ 12A, 4.5V
12A Continuous Drain Current @ 25°C
60A Continuous Drain Current @ 100°C
1150pF Input Capacitance @ 30V
66W Power Dissipation (Max)
N-Channel MOSFET
7V Gate Threshold Voltage @ 250A
5V / 10V Drive Voltage Range
5nC Gate Charge @ 10V
Product Advantages
High Power Density
Low On-Resistance
Excellent Power Handling
Key Technical Parameters
Voltage Rating: 60V Drain-Source, ±20V Gate-Source
Current Rating: 12A Continuous @ 25°C, 60A Continuous @ 100°C
On-Resistance: 15.6mΩ @ 12A, 4.5V
Input Capacitance: 1150pF @ 30V
Power Dissipation: 66W (Max)
Gate Threshold Voltage: 2.7V @ 250A
Gate Charge: 14.5nC @ 10V
Quality and Safety Features
RoHS3 Compliant
-55°C to 150°C Operating Temperature Range
Compatibility
Surface Mount Package: 8-PowerVDFN
Application Areas
Power Supplies
Motor Drives
Industrial Electronics
Automotive Electronics
Product Lifecycle
Current Product
No Discontinuation Planned
Replacements and Upgrades Available
Key Reasons to Choose
High Power Density
Excellent Power Handling Capability
Low On-Resistance for Efficiency
Wide Operating Temperature Range
RoHS3 Compliant for Environmental Compatibility
