Manufacturer Part Number
CSD18537NQ5AT
Manufacturer
Texas Instruments
Introduction
The CSD18537NQ5AT is a high-performance N-channel MOSFET transistor from Texas Instruments' NexFET series. It is designed for a wide range of power management and switching applications.
Product Features and Performance
60V drain-to-source voltage
13mΩ maximum on-resistance at 12A, 10V
50A continuous drain current at 25°C
1480pF maximum input capacitance at 30V
2W maximum power dissipation at 25°C
-55°C to 150°C operating temperature range
Product Advantages
Excellent on-resistance and switching performance
High current handling capability
Wide operating temperature range
Compact 8-VSONP (5x6) package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 13mΩ @ 12A, 10V
Continuous Drain Current (Id): 50A @ 25°C
Input Capacitance (Ciss): 1480pF @ 30V
Power Dissipation (Pd): 3.2W @ 25°C, 75W @ 25°C (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability and safety-critical applications
Compatibility
Surface mount package
Tape and reel packaging
Application Areas
Power supplies
Motor drives
Industrial and consumer electronics
Telecommunications equipment
Product Lifecycle
Current production
Replacements and upgrades available
Key Reasons to Choose This Product
High performance and efficiency
Excellent thermal management
Compact and space-saving design
Wide operating temperature range
Reliable and safe operation
Compatibility with various applications
CSD18535KCSTexas InstrumentsMOSFET N-CH 60V 200A TO220-3