Manufacturer Part Number
CSD18535KCS
Manufacturer
Texas Instruments
Introduction
High-performance N-channel power MOSFET with low on-resistance and high current capability
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 60V
Extremely low on-resistance (Rds(on)) of 2mΩ @ 100A, 10V
Continuous Drain Current (Id) of 200A @ 25°C
Wide operating temperature range of -55°C to 175°C
Fast switching speed and low gate charge (Qg) of 81nC @ 10V
Product Advantages
Efficient power conversion with low conduction and switching losses
Enables high-current, high-power density designs
Robust and reliable performance across wide temperature range
Key Technical Parameters
Vdss: 60V
Vgs(th): 2.4V @ 250A
Rds(on): 2mΩ @ 100A, 10V
Id: 200A @ 25°C
Ciss: 6620pF @ 30V
Qg: 81nC @ 10V
Pd: 300W @ Tc
Quality and Safety Features
RoHS3 compliant
TO-220-3 package for reliable thermal performance
Compatibility
Suitable for high-power, high-current applications such as motor drives, power supplies, and industrial equipment
Application Areas
Industrial and power electronics
Motor drives
Power supplies
Inverters and converters
Product Lifecycle
This product is an active and in-production part from Texas Instruments.
Replacements and upgrades may be available for specific application needs.
Key Reasons to Choose This Product
Exceptional power efficiency and high-current capability
Robust and reliable operation across wide temperature range
Enables compact, high-density power conversion designs
Proven performance and quality from a trusted manufacturer
