Manufacturer Part Number
CSD18534Q5AT
Manufacturer
Texas Instruments
Introduction
High-performance N-channel NexFET power MOSFET
Product Features and Performance
Low on-resistance (Rds(on)) of 9.8 mΩ
High continuous drain current (Id) of 50A
Wide operating temperature range of -55°C to 150°C
Low input capacitance (Ciss) of 1770 pF
High power dissipation of 3.1W (Ta) and 77W (Tc)
Product Advantages
Excellent power efficiency
Compact and space-saving design
Wide range of applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs Max): ±20V
Threshold Voltage (Vgs(th)): 2.3V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg): 11.1 nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
Qualified for automotive and industrial applications
Compatibility
Surface mount package: 8-PowerTDFN
Application Areas
Power management
Motor control
Switching power supplies
Industrial and automotive electronics
Product Lifecycle
Current product
Replacement and upgrade options available
Key Reasons to Choose
Excellent power efficiency and performance
Compact and versatile package
Wide operating temperature range
Suitable for a variety of power applications
