Manufacturer Part Number
CSD18532Q5BT
Manufacturer
Texas Instruments
Introduction
High-performance MOSFET for power applications
Product Features and Performance
60V N-channel MOSFET
Ultra-low on-resistance of 3.2 mΩ
High current capability of 100A
High power dissipation of 3.2W (Ta) and 156W (Tc)
Low input capacitance of 5070 pF
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency
High current handling
Compact size
Wide temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.2 mΩ @ 25A, 10V
Continuous Drain Current (Id): 100A @ 25°C
Input Capacitance (Ciss): 5070 pF @ 30V
Power Dissipation: 3.2W (Ta), 156W (Tc)
Quality and Safety Features
RoHS3 compliant
MOSFET technology
Compatibility
Surface mount
8-PowerTDFN package
Application Areas
Power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Active product
Replacements and upgrades available
Key Reasons to Choose
Excellent power efficiency
High current capability
Compact size
Wide temperature range
RoHS3 compliance
