Manufacturer Part Number
CSD18531Q5A
Manufacturer
Texas Instruments
Introduction
High-performance N-channel power MOSFET with low on-resistance and high power density in a small VSONP package.
Product Features and Performance
Extremely low on-resistance (4.6 mΩ max) for high efficiency
High current capability (19 A continuous, 100 A pulsed)
Very low gate charge (43 nC max) for fast switching
Wide operating temperature range (-55°C to 150°C)
Compact 8-pin VSONP (5x6 mm) package
Product Advantages
Enables high-efficiency power conversion in a small footprint
Suitable for high-current, high-frequency switching applications
Robust design for reliable operation in harsh environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 60 V
Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 4.6 mΩ max
Continuous Drain Current (Id): 19 A (Ta), 100 A (Tc)
Input Capacitance (Ciss): 3840 pF max
Power Dissipation (Pd): 3.1 W (Ta), 156 W (Tc)
Quality and Safety Features
RoHS3 compliant
Tested and qualified for reliable operation
Compatibility
Suitable for a wide range of power conversion and control applications, including:
DC-DC converters
Motor drives
Power supplies
Inverters
Lighting ballasts
Application Areas
High-efficiency power conversion
High-current, high-frequency switching
Industrial, automotive, and consumer electronics
Product Lifecycle
The CSD18531Q5A is an active product and is not nearing discontinuation. Replacement or upgrade options are available as needed.
Key Reasons to Choose This Product
Extremely low on-resistance for high efficiency
High current capability for demanding applications
Fast switching performance with low gate charge
Compact VSONP package for space-constrained designs
Wide operating temperature range for robust operation
RoHS compliance for environmental sustainability