Manufacturer Part Number
CSD18511Q5AT
Manufacturer
Texas Instruments
Introduction
The CSD18511Q5AT is a high-performance, N-channel MOSFET from Texas Instruments. It is part of the NexFET series, designed for high-power applications.
Product Features and Performance
High current capability up to 159A continuous drain current
Low on-resistance of 3.5mΩ at 24A, 4.5V
High voltage rating of 40V drain-to-source
Wide operating temperature range from -55°C to 150°C
Fast switching with low gate charge of 63nC at 10V
Product Advantages
Excellent efficiency and thermal performance
Compact 8-PowerTDFN package
Robust design for reliability in harsh environments
Suitable for high-power, high-frequency applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 3.5mΩ @ 24A, 4.5V
Continuous Drain Current (Id): 159A @ 25°C
Input Capacitance (Ciss): 5850pF @ 10V
Power Dissipation (Tc): 104W
Quality and Safety Features
RoHS3 compliant
Designed for high reliability in industrial and automotive applications
Compatibility
Surface mount package for easy integration into PCB designs
Application Areas
High-power motor drives
Power supplies
Solar inverters
Electric vehicles
Industrial automation
Product Lifecycle
The CSD18511Q5AT is an active product, with no known plans for discontinuation.
Suitable replacement or upgrade options may be available from Texas Instruments' current portfolio.
Several Key Reasons to Choose This Product
Excellent performance and efficiency for high-power applications
Robust design and wide operating temperature range
Compact package and easy integration
Reliable and RoHS-compliant for industrial and automotive use
Supported by Texas Instruments' expertise and product portfolio
