Manufacturer Part Number
CSD18532KCS
Manufacturer
Texas Instruments
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
High current capability up to 100A continuous drain current
Low on-resistance of 4.2 mOhm
Wide operating voltage range up to 60V
Wide operating temperature range from -55°C to 175°C
Fast switching speed
High power density with up to 250W power dissipation
Product Advantages
Efficient power conversion and control
Compact size and high power density
Reliable operation in harsh environments
Ease of integration and design
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4.2 mOhm
Continuous Drain Current (ID): 100A
Input Capacitance (Ciss): 4680 pF
Power Dissipation (Pd): 250W
Quality and Safety Features
RoHS3 compliant
Through-hole TO-220-3 package
Robust design for reliable operation
Compatibility
Compatible with a wide range of power electronic applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is an active and widely-used component.
Replacements and upgrades are readily available.
Key Reasons to Choose This Product
High current and power handling capability
Extremely low on-resistance for efficient power conversion
Wide operating voltage and temperature range
Compact size and high power density
Reliable performance in harsh environments
Easy integration and design flexibility
