Manufacturer Part Number
CSD18531Q5AT
Manufacturer
Texas Instruments
Introduction
High-performance N-channel NexFET MOSFET for power conversion applications
Product Features and Performance
Low on-resistance of 4.6 mΩ
High current handling capability up to 100A
Fast switching speed with low gate charge of 43 nC
Wide operating temperature range of -55°C to 150°C
High power dissipation up to 156W
Product Advantages
Excellent efficiency and thermal performance
Compact and space-saving surface-mount package
Reliable and robust design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4.6 mΩ
Continuous Drain Current (Id): 100A
Input Capacitance (Ciss): 3840 pF
Power Dissipation: 3.1W (Ta), 156W (Tc)
Quality and Safety Features
RoHS3 compliant
Robust and reliable design
Compatibility
Compatible with various power conversion applications
Application Areas
Power supplies
Motor drives
Automotive electronics
Industrial automation
Telecommunications equipment
Product Lifecycle
This product is currently in production and has no known discontinuation plans.
Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent efficiency and thermal performance for improved system reliability
High current handling capability for demanding power conversion applications
Compact and space-saving surface-mount package for design flexibility
Robust and reliable design for long-term operation
Wide operating temperature range for versatile use cases
