Manufacturer Part Number
CSD18511KTT
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
N-Channel MOSFET
40V Drain to Source Voltage
±20V Gate to Source Voltage
6mΩ On-Resistance @ 100A, 10V
194A Continuous Drain Current @ 25°C
5940pF Input Capacitance @ 20V
188W Power Dissipation
Product Advantages
Efficient power conversion with low on-resistance
High current handling capability
Compact DDPAK/TO-263-3 package
Key Technical Parameters
MOSFET Technology
Vds: 40V
Vgs (Max): ±20V
Rds On (Max): 2.6mΩ @ 100A, 10V
Id (Continuous): 194A @ 25°C
Ciss (Max): 5940pF @ 20V
Power Dissipation (Max): 188W
Quality and Safety Features
RoHS3 Compliant
Operating Temperature Range: -55°C to 175°C
Compatibility
Surface Mount Mounting Type
Tape & Reel Packaging
Application Areas
Power conversion
Motor control
Voltage regulation
Switching applications
Product Lifecycle
Current production status
Replacement/upgrade options may be available
Key Reasons to Choose
Excellent power efficiency with low on-resistance
High current handling for demanding applications
Compact and thermally-efficient package
Reliable operation across wide temperature range