Manufacturer Part Number
CSD18504KCS
Manufacturer
Texas Instruments
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
Capable of handling high current and voltage
Low on-resistance for efficient power conversion
Fast switching speed and low gate charge for high-frequency applications
Product Advantages
Excellent thermal performance and power handling
Reliable and robust construction
Suitable for a wide range of power electronics applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 40V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 7mΩ @ 40A, 10V
Continuous Drain Current (Id): 53A (Ta), 100A (Tc)
Input Capacitance (Ciss): 1800pF @ 20V
Power Dissipation (Max): 115W (Tc)
Quality and Safety Features
ROHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Power amplifiers
Industrial and consumer electronics
Product Lifecycle
Actively supported by the manufacturer
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Reliable and efficient power handling
Suitable for high-frequency, high-current applications
Proven track record in a wide range of power electronics designs