Manufacturer Part Number
CSD18501Q5A
Manufacturer
Texas Instruments
Introduction
High-performance, low-resistance N-channel MOSFET transistor for power management applications
Product Features and Performance
Extremely low on-resistance (Rds(on)) of 3.2mΩ @ 25A, 10V
High current capability up to 100A
Fast switching with low gate charge (Qg) of 50nC @ 10V
Wide operating temperature range of -55°C to 150°C
Compact 8-PowerTDFN package
Product Advantages
Excellent power efficiency due to low conduction losses
Enables high-density, high-power-density power supply designs
Reliable performance across wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 22A (Ta), 100A (Tc)
Input Capacitance (Ciss): 3840pF @ 20V
Power Dissipation: 3.1W (Ta), 150W (Tc)
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a variety of power management applications, including DC-DC converters, motor drives, and power inverters
Application Areas
Power supplies
Motor drives
Inverters
Battery management systems
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent power efficiency and high current capability for high-density, high-power-density designs
Reliable performance across wide temperature range
Compact package size for space-constrained applications
Designed and manufactured to high quality standards