Manufacturer Part Number
CSD17581Q5A
Manufacturer
Texas Instruments
Introduction
High-performance, high-efficiency N-channel MOSFET for power conversion and management applications
Product Features and Performance
Extremely low on-resistance (RDS(on)) of 3.4 mΩ @ 16 A, 10 V
High drain current capability of 24 A (Ta) and 123 A (Tc)
Low gate charge (Qg) of 54 nC @ 10 V for efficient switching
Wide operating temperature range of -55°C to 155°C
Product Advantages
Excellent power conversion efficiency
Reduced power losses and thermal management requirements
Enables compact and lightweight power supply designs
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30 V
Gate-to-Source Voltage (VGS): ±20 V
Threshold Voltage (VGS(th)): 1.7 V @ 250 A
Input Capacitance (Ciss): 3640 pF @ 15 V
Power Dissipation: 3.1 W (Ta), 83 W (Tc)
Quality and Safety Features
RoHS3 compliant
8-PowerTDFN (5x6) surface-mount package
Compatibility
Suitable for a wide range of power conversion and management applications
Application Areas
Power supplies
Motor drives
DC-DC converters
Inverters
Battery chargers
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent power efficiency and performance
Compact and thermally efficient package
Wide operating temperature range
Robust and reliable design
Compatibility with a variety of power applications