Manufacturer Part Number
CSD17579Q3A
Manufacturer
Texas Instruments
Introduction
The CSD17579Q3A is a high-performance N-channel MOSFET transistor from Texas Instruments' NexFET series, designed for use in a wide range of power management and switching applications.
Product Features and Performance
30V drain-to-source voltage rating
2 mOhm maximum on-resistance at 8A, 10V
20A continuous drain current at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 998 pF at 15V
High power dissipation of 3.2W at 25°C and 29W at case temperature
Product Advantages
Excellent efficiency and low power losses due to low on-resistance
Robust design with high voltage and temperature capabilities
Compact 8-VSONP (3x3.3) surface mount package
Key Technical Parameters
Drain-to-source voltage (Vdss): 30V
Maximum gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 10.2 mOhm @ 8A, 10V
Threshold voltage (Vgs(th)): 1.9V @ 250A
Input capacitance (Ciss): 998 pF @ 15V
Gate charge (Qg): 15 nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Designed for use in a wide range of power management and switching applications
Application Areas
Switched-mode power supplies
Motor drives
Inverters
DC-DC converters
Industrial and automotive electronics
Product Lifecycle
Currently in active production
Readily available as a standard product
No plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
Excellent efficiency and low power losses due to low on-resistance
Robust design with high voltage and temperature capabilities
Compact surface mount package for space-constrained applications
Proven reliability and performance in a wide range of power management and switching applications
Readily available as a standard product from a reputable manufacturer
