Manufacturer Part Number
CSD17577Q3AT
Manufacturer
Texas Instruments
Introduction
The CSD17577Q3AT is a high-performance N-channel MOSFET transistor from Texas Instruments' NexFET series, designed for efficient power switching applications.
Product Features and Performance
30V Drain-Source Voltage (Vdss)
±20V Gate-Source Voltage (Vgs)
8mΩ On-Resistance (Rds(on)) at 16A, 10V
35A Continuous Drain Current (Id) at 25°C
2310pF Input Capacitance (Ciss) at 15V
8W Power Dissipation at 25°C, 53W at Case Temperature
Wide -55°C to 150°C Operating Temperature Range
Product Advantages
Excellent on-resistance for high-efficiency power conversion
High current handling capability
Low gate charge for fast switching
Robust design for reliable operation
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
8V Gate Threshold Voltage (Vgs(th)) at 250A
5V to 10V Drive Voltage Range
35nC Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 Compliant
8-PowerVDFN Package
Compatibility
This MOSFET is compatible with a wide range of power electronics applications, including:
Switch-mode power supplies
DC-DC converters
Motor drives
Telecommunications equipment
Industrial automation
Application Areas
High-efficiency power conversion
Voltage regulation
Power management
Brushless DC motor control
Product Lifecycle
The CSD17577Q3AT is an active product in Texas Instruments' portfolio. There are no indications of it being discontinued, and replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent on-resistance and low power losses for high-efficiency power conversion
Robust design and wide operating temperature range for reliable performance
Fast switching capability with low gate charge for high-frequency applications
Compatibility with a wide range of power electronics applications
Availability of replacement or upgrade options from the manufacturer
