Manufacturer Part Number
CSD17576Q5BT
Manufacturer
Texas Instruments
Introduction
High-performance discrete MOSFET transistor
Product Features and Performance
Low on-resistance of 2mΩ at 25A and 10V
High current capability of 100A continuous drain current
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 4430pF at 15V
High power dissipation of 3.1W at Ta and 125W at Tc
Product Advantages
Excellent power efficiency and thermal performance
High current handling capability
Wide temperature range for diverse applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate to Source Voltage (Vgs) (Max): ±20V
Drain Current (Id) (Continuous) @ 25°C: 100A
On-Resistance (Rds(on)) @ 25A, 10V: 2mΩ
Input Capacitance (Ciss) @ 15V: 4430pF
Power Dissipation (Max) @ Ta: 3.1W, @ Tc: 125W
FET Type: N-Channel MOSFET
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount package (8-VSONP 5x6)
Compatible with standard SMT assembly processes
Application Areas
Power supplies
Motor drives
Inverters
Electric vehicles
Industrial and consumer electronics
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
High current handling capability up to 100A
Wide operating temperature range of -55°C to 150°C
Low on-resistance and input capacitance for improved efficiency
Compact surface mount package for space-constrained designs
Suitable for high-reliability applications with RoHS3 compliance
