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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleCSD17570Q5B
Texas Instruments
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CSD17570Q5B - Texas Instruments

Manufacturer Part Number
CSD17570Q5B
Manufacturer
Texas Instruments
Allelco Part Number
32D-CSD17570Q5B
ECAD Model
Parts Description
MOSFET N-CH 30V 100A 8VSON
Detailed Description
Package
8-PowerTDFN
Data sheet
CSD17570Q5B.pdf
RoHs Status
ROHS3 Compliant
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In stock: 35010

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Specifications

CSD17570Q5B Tech Specifications
Texas Instruments - CSD17570Q5B technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments - CSD17570Q5B

Product Attribute Attribute Value  
Manufacturer Texas Instruments  
Vgs(th) (Max) @ Id 1.9V @ 250µA  
Vgs (Max) ±20V  
Technology MOSFET (Metal Oxide)  
Supplier Device Package 8-VSON-CLIP (5x6)  
Series NexFET™  
Rds On (Max) @ Id, Vgs 0.69mOhm @ 50A, 10V  
Power Dissipation (Max) 3.2W (Ta)  
Package / Case 8-PowerTDFN  
Package Tape & Reel (TR)  
Product Attribute Attribute Value  
Operating Temperature -55°C ~ 150°C (TJ)  
Mounting Type Surface Mount  
Input Capacitance (Ciss) (Max) @ Vds 13600 pF @ 15 V  
Gate Charge (Qg) (Max) @ Vgs 121 nC @ 4.5 V  
FET Type N-Channel  
FET Feature -  
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V  
Drain to Source Voltage (Vdss) 30 V  
Current - Continuous Drain (Id) @ 25°C 100A (Ta)  
Base Product Number CSD17570Q5  

Parts Introduction

Manufacturer Part Number

CSD17570Q5B

Manufacturer

Texas Instruments

Introduction

High-performance GaN FET in 8-VSON-CLIP (5x6) package for power conversion applications

Product Features and Performance

High current capability up to 100A

Ultra-low on-resistance of 0.69mΩ

High-speed switching with fast turn-on/turn-off

Wide operating temperature range of -55°C to 150°C

High input capacitance of 13600pF

Maximum power dissipation of 3.2W

Product Advantages

Excellent performance for high-efficiency power conversion

Compact package for space-constrained designs

Robust thermal characteristics for reliable operation

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

Gate-Source Voltage (Vgs): ±20V

Continuous Drain Current (Id): 100A

On-Resistance (Rds(on)): 0.69mΩ

Input Capacitance (Ciss): 13600pF

Gate Charge (Qg): 121nC

Quality and Safety Features

RoHS3 compliant

MOSFET technology with high reliability and safety

Compatibility

Suitable for a wide range of power conversion applications, such as DC-DC converters, motor drives, and power supplies

Application Areas

Power conversion

Motor drives

Industrial electronics

Telecommunications equipment

Automotive electronics

Product Lifecycle

Currently available

No plans for discontinuation

Several Key Reasons to Choose This Product

Exceptional performance with ultra-low on-resistance and high current capability

Compact package for space-constrained designs

Robust thermal characteristics for reliable operation

Proven MOSFET technology for high reliability and safety

Suitable for a wide range of power conversion applications

Parts with Similar Specifications

The three parts on the right have similar specifications to Texas Instruments CSD17570Q5B

Product Attribute CSD17570Q5B CSD17571Q2 CSD17576Q5BT CSD17570Q5BT
Part Number CSD17570Q5B CSD17571Q2 CSD17576Q5BT CSD17570Q5BT
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Package Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Base Product Number CSD17570Q5 CSD17571 CSD17576Q5 CSD17570Q5
Gate Charge (Qg) (Max) @ Vgs 121 nC @ 4.5 V 3.1 nC @ 4.5 V 32 nC @ 4.5 V 121 nC @ 4.5 V
Series NexFET™ NexFET™ NexFET™ NexFET™
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Rds On (Max) @ Id, Vgs 0.69mOhm @ 50A, 10V 29mOhm @ 5A, 4.5V 2mOhm @ 25A, 10V 0.69mOhm @ 50A, 10V
Power Dissipation (Max) 3.2W (Ta) 2.5W (Ta) 3.1W (Ta), 125W (Tc) 3.2W (Ta)
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 22A (Ta) 100A (Ta) 100A (Ta)
Package / Case 8-PowerTDFN 6-WDFN Exposed Pad 8-PowerTDFN 8-PowerTDFN
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id 1.9V @ 250µA 2V @ 250µA 1.8V @ 250µA 1.9V @ 250µA
Vgs (Max) ±20V ±20V ±20V ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Supplier Device Package 8-VSON-CLIP (5x6) 6-SON (2x2) 8-VSONP (5x6) 8-VSON-CLIP (5x6)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
FET Feature - - - -
Input Capacitance (Ciss) (Max) @ Vds 13600 pF @ 15 V 468 pF @ 15 V 4430 pF @ 15 V 13600 pF @ 15 V
FET Type N-Channel N-Channel N-Channel N-Channel

CSD17570Q5B Datasheet PDF

Download CSD17570Q5B pdf datasheets and Texas Instruments documentation for CSD17570Q5B - Texas Instruments.

PCN Design/Specification
Qualification Revision A 01/Jul/2014.pdf
PCN Assembly/Origin
Assembly/Test Site Transfer 19/Dec/2014.pdf

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Delivery Time

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Delivery Cost

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Delivery Method

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  2. Others more shipping ways, please get in touch with your customer manager.

Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.

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Texas Instruments

CSD17570Q5B

Texas Instruments
32D-CSD17570Q5B

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