Manufacturer Part Number
CSD17551Q3A
Manufacturer
Texas Instruments
Introduction
The CSD17551Q3A is a single N-channel power MOSFET transistor from Texas Instruments' NexFET series.
Product Features and Performance
30V drain-to-source voltage (Vdss)
±20V gate-to-source voltage (Vgs)
9mΩ maximum on-resistance (Rds(on)) at 11A, 10V
12A continuous drain current (Id) at 25°C
1370pF maximum input capacitance (Ciss) at 15V
6W maximum power dissipation at 25°C ambient temperature
Operating temperature range of -55°C to +150°C
Product Advantages
Low on-resistance for improved efficiency
High current handling capability
Compact 8-SON (3.3x3.3) package
RoHS3 compliant
Key Technical Parameters
MOSFET technology
N-channel FET type
1V maximum gate threshold voltage (Vgs(th)) at 250A
5V to 10V drive voltage range
8nC maximum gate charge (Qg) at 4.5V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
This MOSFET is compatible with a wide range of power electronics and control circuits.
Application Areas
Power supplies
Motor drives
DC/DC converters
Inverters
Industrial and consumer electronics
Product Lifecycle
The CSD17551Q3A is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from Texas Instruments.
Key Reasons to Choose This Product
Excellent efficiency due to low on-resistance
High current capability for demanding applications
Compact package for space-constrained designs
Wide operating temperature range
RoHS3 compliance for environmentally-conscious applications
