Manufacturer Part Number
CSD17556Q5B
Manufacturer
Texas Instruments
Introduction
High-performance, high-power N-channel MOSFET with low on-resistance and high-speed switching
Product Features and Performance
Extremely low on-resistance of 1.4 mΩ @ 40 A, 10 V
High current capability of 34 A (Ta) and 100 A (Tc)
Fast switching with low gate charge of 39 nC @ 4.5 V
Wide operating temperature range of -55°C to 150°C (TJ)
Robust design with high drain-to-source voltage of 30 V
Product Advantages
Excellent thermal management for high-power applications
Optimized for high efficiency in power conversion circuits
Enables compact and lightweight power system designs
Reliable and rugged performance across wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30 V
Gate-to-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 1.4 mΩ @ 40 A, 10 V
Continuous Drain Current (Id): 34 A (Ta), 100 A (Tc)
Input Capacitance (Ciss): 7020 pF @ 15 V
Power Dissipation: 3.1 W (Ta), 191 W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability, safety-critical applications
Compatibility
Surface mount, 8-VSON-CLIP (5x6) package
Tape and reel (TR) packaging
Application Areas
High-efficiency power conversion
Motor drives
Industrial and consumer electronics
Renewable energy systems
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Exceptional power handling and efficiency
Robust and reliable performance across wide temperature range
Optimized for compact and lightweight power system designs
Proven technology from a trusted semiconductor manufacturer
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