Manufacturer Part Number
CSD17559Q5
Manufacturer
Texas Instruments
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
Low on-resistance (1.15 mΩ)
High current capability (40 A continuous, 100 A pulsed)
Fast switching speed
High power density (3.2 W at 25°C, 96 W at case temperature)
Wide temperature range (-55°C to 150°C)
Low gate charge (51 nC)
Product Advantages
Excellent efficiency and power density
Robust thermal performance
Suitable for high-power, high-frequency applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 30 V
Gate-to-source voltage (Vgs): ±20 V
On-resistance (Rds(on)): 1.15 mΩ @ 40 A, 10 V
Continuous drain current (Id): 40 A (at 25°C), 100 A (at case temperature)
Input capacitance (Ciss): 9200 pF @ 15 V
Quality and Safety Features
RoHS3 compliant
High reliability and long-term stability
Compatibility
Surface mount package (8-PowerTDFN)
Suitable for a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Industrial and consumer electronics
Automotive electronics
Product Lifecycle
This product is currently in production and there are no plans for discontinuation.
Replacement or upgrade options are available from Texas Instruments.
Several Key Reasons to Choose This Product
Exceptional power density and efficiency
Robust thermal performance allowing high-power operation
Fast switching speed for high-frequency applications
Low gate charge for easy driver integration
Reliable and RoHS-compliant design
Wide operating temperature range
CSD17551Q3ATexas InstrumentsMOSFET N-CH 30V 12A 8SON