Manufacturer Part Number
CSD17573Q5BT
Manufacturer
Texas Instruments
Introduction
The CSD17573Q5BT is a high-performance N-channel MOSFET transistor from Texas Instruments' NexFET series.
Product Features and Performance
30V drain-to-source voltage
100A continuous drain current at 25°C
Ultra-low on-resistance of 1mΩ @ 35A, 10V
High input capacitance of 9000pF @ 15V
Low gate charge of 64nC @ 4.5V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency and thermal performance
Enables high-current, high-frequency power conversion
Suitable for a wide range of power management applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1mΩ @ 35A, 10V
Continuous Drain Current (Id): 100A @ 25°C
Input Capacitance (Ciss): 9000pF @ 15V
Gate Charge (Qg): 64nC @ 4.5V
Quality and Safety Features
RoHS3 compliant
8-VSON-CLIP (5x6) package for improved thermal performance
Compatibility
Suitable for a wide range of power management applications, including DC-DC converters, motor drives, and power supplies
Application Areas
High-current, high-frequency power conversion
Power management in industrial, automotive, and consumer electronics
Product Lifecycle
Currently in production
Replacement or upgrade options may be available from Texas Instruments
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Enables high-current, high-frequency power conversion
Wide operating temperature range
Ultra-low on-resistance for improved energy efficiency
Compact and thermally efficient 8-VSON-CLIP (5x6) package
