Manufacturer Part Number
CSD17578Q3A
Manufacturer
Texas Instruments
Introduction
The CSD17578Q3A is a high-performance N-channel MOSFET from Texas Instruments' NexFET series, designed for a wide range of power management and control applications.
Product Features and Performance
30V drain-source voltage rating
3mΩ maximum on-resistance at 10A, 10V
20A continuous drain current at 25°C
1590pF maximum input capacitance at 15V
2W power dissipation at Ta, 37W at Tc
Operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency due to low on-resistance
High current capability for demanding applications
Compact 8-VSONP (3x3.3) package
Robust thermal performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs Max): ±20V
On-Resistance (Rds(on) Max): 7.3mΩ @ 10A, 10V
Continuous Drain Current (Id): 20A at 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
This MOSFET is suitable for a wide range of power management and control applications, including DC-DC converters, motor drives, and power amplifiers.
Application Areas
Power management
Motor control
Power amplifiers
Industrial and consumer electronics
Product Lifecycle
The CSD17578Q3A is an active product, with no plans for discontinuation. Replacements and upgrades may be available in the future as part of Texas Instruments' ongoing product development.
Several Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
High current capability for demanding applications
Compact and thermally efficient package
Robust operating temperature range
Compatibility with a wide range of power management and control applications
Backed by Texas Instruments' reputation for quality and reliability
