Manufacturer Part Number
CSD17581Q3AT
Manufacturer
Texas Instruments
Introduction
The CSD17581Q3AT is a high-performance N-channel MOSFET transistor from Texas Instruments. It is part of the NexFET series, designed for efficient power conversion applications.
Product Features and Performance
Low on-resistance of 3.8 mΩ @ 16A, 10V
High current capability of 60A continuous drain current (Tc)
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 3640 pF @ 15V
High power dissipation of 2.8W (Ta) and 63W (Tc)
Product Advantages
Improved efficiency due to low on-resistance
High current handling capability
Suitable for high-temperature environments
Compact 8-VSONP (3x3.3) package
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±20V
Gate Charge (Qg): 54 nC @ 10V
Threshold Voltage (Vgs(th)): 1.7V @ 250A
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial automation
Telecommunication equipment
Consumer electronics
Product Lifecycle
Currently in production
Replacement or upgrade parts may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and power handling capabilities
Wide operating temperature range
Compact and space-saving package
Reliable performance and quality