Manufacturer Part Number
CSD17581Q5AT
Manufacturer
Texas Instruments
Introduction
The CSD17581Q5AT is a high-performance N-channel MOSFET transistor from Texas Instruments, designed for use in a variety of power management and control applications.
Product Features and Performance
30V drain-to-source voltage (Vdss)
±20V gate-to-source voltage (Vgs)
4mΩ maximum on-resistance (Rds(on)) at 16A, 10V
24A continuous drain current (Id) at 25°C ambient temperature
123A continuous drain current (Id) at 25°C case temperature
3640pF maximum input capacitance (Ciss) at 15V
1W power dissipation at 25°C ambient temperature
83W power dissipation at 25°C case temperature
Product Advantages
Excellent power efficiency due to low on-resistance
High current handling capability
Wide operating temperature range (-55°C to 150°C)
Compact 8-VSONP (5x6) package
Key Technical Parameters
Drain-to-source voltage (Vdss): 30V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 3.4mΩ @ 16A, 10V
Continuous drain current (Id): 24A (Ta), 123A (Tc)
Input capacitance (Ciss): 3640pF @ 15V
Power dissipation: 3.1W (Ta), 83W (Tc)
Gate threshold voltage (Vgs(th)): 1.7V @ 250A
Gate charge (Qg): 54nC @ 10V
Quality and Safety Features
RoHS3 compliant
Meets stringent quality and reliability standards
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Power supplies
Motor drives
DC-DC converters
Amplifiers
Switching regulators
Product Lifecycle
This product is currently in active production and widely available.
Replacements or upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent power efficiency and low on-resistance for improved system performance
High current handling capability for demanding applications
Wide operating temperature range for versatile use
Compact package size for space-constrained designs
Meets RoHS3 compliance requirements for environmentally-friendly use
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